High efficiency green InP quantum dot light-emitting diodes by balancing electron and hole mobility
Upon modifying cadmium-free InP quantum dot emitting layer by passivation with 1,4-butanediamine and zinc iodide, we successfully decrease electron mobility and enhances the hole transport in the InP QLED. As a result of optimizing the electrons and hole injection, it leads to green 545 nm InP QLED with a maximum quantum efficiency (EQE) of 16.3% and a current efficiency of 57.5 cd/A.
