Remote epitaxy towards high-quality freestanding semiconductors
Recent advances on remote epitaxy and 2D material-assisted layer transfer technique (2DLT) can propel heterogeneous integration of diverse materials into new heights, by offering diverse of free-standing single-crystalline semiconductor thin films for various electronic and optical applications.
Remote epitaxy is an emergent novel technology that can grow and exfoliate free-standing single-crystalline thin films and structures from the 2D van der Waals materials interface [1, 2]. 2D material-assisted layer transfer technique (2DLT)  is the corresponding technique to delaminate and transfer the freestanding semiconductors membranes out of the host substrate to other arbitrary target substrates of interest. This method can not only enable diverse new hetero-integration choices for diverse functional high-quality materials thin films [4, 5], but also enable potentially flexible and stretchable electronic and optoelectronics applications as well .
Despite that the principle of remote epitaxy looks simple, it could be challenging to implement due to the stringent requirements for 2D-materials-coated substrate preparation and procedure control. In a recent review paper published on Nature Reviews Methods Primers (article info detailed as below), extensive guidelines on remote epitaxy techniques are elaborated, from preparing 2D materials to epitaxy processes and layer transfer methods. Key considerations and characterization techniques are provided for respective families of materials, as long as their applications for different devices and engineering systems.
Hyunseok Kim, Celesta S. Chang, Sangho Lee, et al, Remote epitaxy, Nature Reviews Methods Primers, 2, 40 (2022).
Primer view: https://www.nature.com/articles/s43586-022-00134-6
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 Remote epitaxy, Nature Reviews Methods Primers, 2, 40 (2022).
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