In this Article, we reported a defective macro-assembled graphene nanofilm (D-nMAG)/Silicon (Si) photodetector using trap-assisted gain to optimize the photoelectric response. This wafer-scale environmentally friendly carbon material can be easily compatible with the complementary-metal-oxide-semiconductor (CMOS) technical. Noteworthy, the defective states in D-nMAG trap carriers and then enter the conduction (CB) and valence band (VB) again to be thermalized, generating a gain in photocurrent. Thus, our D-nMAG-based line array image sensor exhibits high-resolution infrared imaging of the target. This device displays a high responsivity at room temperature within a broad-spectrum region, i.e., 0.156 A/W @ 900 nm in the near-infrared (NIR) region and 3.7 mA/W @ 4 μm in the mid-infrared (MIR) region. Our work provides a carbon nanofilm for IR detection at a broad-spectrum region, with tunable defective structure, uniform thickness, and wafer-scale production.